Winsemi WFP3205
This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products.| Part No. | WFP3205 |
|---|---|
| Datasheet | WFP3205 Download |
| Manufacturer |  Winsemi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● 110A,50V, RDS(on)(Max 8mΩ)@VGS=10V● Ultra-low Gate charge(Typical133nC)
● Fast Switching Capability
● 100%Avalanche Tested
● Maximum Junction Temperature Range(150℃)
GENERAL DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note1) (Note3) (Note1) Parameter Value 50 110 80 390 ±20 20 5.0 200 1.3 -55~150 300 Units V A A A V mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.75 62 Units ℃/W ℃/W ℃/W Rev.A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Data...
