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WFP50N06 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's trench Layout -based process .This technology mproves the performances Compared with standard parts form various sources.All of these power MOSFETs are designed for applications in switching regulators , switching convertors, motor and relay drivers ,and

Key Features

  • RDS(on)(Max 22mΩ)@VGS=10V.
  • Ultra-low Gate Charge(Typical 31nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFP50N06 Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFP50N06
Manufacturer Winsemi
File Size 590.12 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP50N06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features ■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFP50N06 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's trench Layout -based process .This technology mproves the performances Compared with standard parts form various sources.All of these power MOSFETs are designed for applications in switching regulators , switching convertors, motor and relay drivers ,and drivers for high power bipolar switching transistors demanding high speed and low gate drive power.