WFP50N06 Description
This Power MOSFET is produced using Winsemi's trench Layout -based process .This technology mproves the performances pared with standard parts form various sources.All of these power MOSFETs are designed for applications in switching regulators , switching convertors, motor and relay drivers ,and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Ratings Symbol...
WFP50N06 Key Features
- RDS(on)(Max 22mΩ)@VGS=10V
- Ultra-low Gate Charge(Typical 31nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)