Description
This Power MOSFET is produced using Winsemi's trench Layout -based process .This technology mproves the performances Compared with standard parts form various sources.All of these power MOSFETs are designed for applications in switching regulators , switching convertors, motor and relay drivers ,and
Features
- RDS(on)(Max 22mΩ)@VGS=10V.
- Ultra-low Gate Charge(Typical 31nC).
- Fast Switching Capability.
- 100%Avalanche Tested.
- Maximum Junction Temperature Range(150℃)
WFP50N06
Silicon N-Channel MOSFET
General.
WFP50N06 Datasheet
