WFP50N06 Datasheet | Winsemi

Features - RDS(on)(Max 22mΩ)@VGS=10V - Ultra-low Gate Charge(Typical 31nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's trench Layout -based process .This technology mproves the performances pared with standard parts form various sources.All of these power MOSFETs are designed for applications in switching regulators , switching convertors, motor and relay drivers ,and drivers for high power bipolar switching transistors demanding high speed and low gate drive...