Datasheet Details
| Part number | WFP50N06 |
|---|---|
| Manufacturer | Winsemi |
| File Size | 590.12 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet | WFP50N06-Winsemi.pdf |
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| Part number | WFP50N06 |
|---|---|
| Manufacturer | Winsemi |
| File Size | 590.12 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet | WFP50N06-Winsemi.pdf |
|
|
|
This Power MOSFET is produced using Winsemi's trench Layout -based process .This technology mproves the performances pared with standard parts form various sources.All of these power MOSFETs are designed for applications in switching regulators , switching convertors, motor and relay drivers ,and drivers for high power bipolar switching transistors demanding high speed and low gate drive power.
Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Fact
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