Winsemi WFP50N06
This Power MOSFET is produced using Winsemi's trench Layout -based process .This technology mproves the performances Compared with standard parts form various sources.All of these power MOSFETs are designed for applications in switching regulators , switching convertors, motor and relay drivers ,and drivers for high power bipolar switching transistors demanding high speed and low gate drive power.| Part No. | WFP50N06 |
|---|---|
| Datasheet | WFP50N06 Download |
| Manufacturer |  Winsemi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(on)(Max 22mΩ)@VGS=10V● Ultra-low Gate Charge(Typical 31nC)
● Fast Switching Capability
● 100%Avalanche Tested
● Maximum Junction Temperature Range(150℃) WFP50N06 Silicon N-Channel MOSFET
GENERAL DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Fact
