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WFP540 Datasheet Silicon N-channel MOSFET

Manufacturer: Winsemi

Datasheet Details

Part number WFP540
Manufacturer Winsemi
File Size 339.46 KB
Description Silicon N-Channel MOSFET
Datasheet WFP540-Winsemi.pdf

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe, DMOS technology.

this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.

Absolute Maximum Ratings Symbol VDSS Drain Source Voltage Parameter ID IDM VGS EAS EAR dv/dt Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv

Key Features

  • 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 25nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage (VISO=4000V AC).
  • Maximum Junction Temperature Range(150℃) WFP540 Silicon N-Channel MOSFET General.

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