WFP540 Datasheet | Winsemi

Features - 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V - Ultra-low Gate charge(Typical 25nC) - Fast Switching Capability - 100%Avalanche Tested - Isolation Voltage (VISO=4000V AC) - Maximum Junction Temperature Range(150℃) Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, DMOS technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. Absolute...