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WFP540 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe, DMOS technology.

Key Features

  • 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 25nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage (VISO=4000V AC).
  • Maximum Junction Temperature Range(150℃) WFP540 Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFP540
Manufacturer Winsemi
File Size 339.46 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP540 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features □ 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V □ Ultra-low Gate charge(Typical 25nC) □ Fast Switching Capability □ 100%Avalanche Tested □ Isolation Voltage (VISO=4000V AC) □ Maximum Junction Temperature Range(150℃) WFP540 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, DMOS technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.