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WFP5N80 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topo

Key Features

  • 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 14nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFP5N80 Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFP5N80
Manufacturer Winsemi
File Size 524.85 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP5N80 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features � 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 14nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFP5N80 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.