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WFU4N60 Datasheet Silicon N-Channel MOSFET

Manufacturer: Winsemi

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Datasheet Details

Part number WFU4N60
Manufacturer Winsemi
File Size 548.68 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFU4N60 Datasheet

General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics.

This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast.

Overview

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Key Features

  • 4A,600V. RDS(on)(Max 2.5Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 16nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage ( VISO = 4000V AC ).
  • Maximum Junction Temperature Range(150℃) General.

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