WFU4N60 - N-Channel MOSFET

Wisdom technologies

Key Features

Low Intrinsic Capacitances .
Excellent Switching Characteristics .
Extended Safe Operating Area .
Unrivalled Gate Charge : 15 nC (Typ. ).
BVDSS=600V,ID=4A.
Lower RDS(on) : 2.5Ω (Max) @VG=10V.
100% Avalanche Tested TO‐252 TO‐251 G‐Gate,D‐Drain,S‐Sourse Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (Tc=.

WFU4N60 n-channel mosfet by Wisdom technologies - Datasheet Preview

Datasheet Details

Part number	WFU4N60
Manufacturer	Wisdom technologies
File Size	643.70 KB
Description	N-Channel MOSFET
Datasheet	WFU4N60 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
WFU4N60	Silicon N-Channel MOSFET	Winsemi
WFU4N65S	Power MOSFET	Winsemi
WFU1N60	Silicon N-Channel MOSFET	Winsemi
WFU1N60C	Power MOSFET	Winsemi
WFU1N60N	Silicon N-Channel MOSFET	Winsemi

Other Datasheets by Wisdom technologies

Part Number	Description
WFU430	N-Channel MOSFET
WFU1N80	N-Channel MOSFET
WFU2N60	N-Channel MOSFET
WFU5N60	HIGH VOLTAGE N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HIGH VOLTAGE N-Channel MOSFET WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4A □ Lower RDS(on) : 2.