Winsemi WFU4N60
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics.| Part No. | WFU4N60 |
|---|---|
| Datasheet | WFU4N60 Download |
| Manufacturer |  Winsemi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V● Ultra-low Gate Charge(Typical 16nC)
● Fast Switching Capability
● 100%Avalanche Tested
● Isolation Voltage ( VISO = 4000V AC )
● Maximum Junction Temperature Range(150℃)
GENERAL DESCRIPTION
This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast.ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature (Note 2) (Note 1) (Note 3) (Note1) 2.5 16 ±30 240 10 4.5 80 0.78 -55~150 300 A A V mJ mJ V/ns W W/℃ ℃ ℃ Drain Source Voltage Continuous Drain Current(@Tc=25℃) Parameter Value 600 4 Units V A Channel Temperature Thermal Characteristics Symbol RQJC RQJA RQJA Parameter Thermal Resistance, Junction-to-Case Therma...
