WFU4N60 Datasheet | Winsemi

Datasheet pdf - http://..net/ .DataSheet.co.kr U4N60 WF WFU Silicon N-Channel MOSFET Features - 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V - Ultra-low Gate Charge(Typical 16nC) - Fast Switching Capability - 100%Avalanche Tested - Isolation Voltage ( VISO = 4000V AC ) - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast. Absolute Maximum...