Datasheet4U Logo Datasheet4U.com

WFU4N60 - Silicon N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics.

Features

  • 4A,600V. RDS(on)(Max 2.5Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 16nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage ( VISO = 4000V AC ).
  • Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

Datasheet preview – WFU4N60

Datasheet Details

Part number WFU4N60
Manufacturer Winsemi
File Size 548.68 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFU4N60 Datasheet
Additional preview pages of the WFU4N60 datasheet.

📁 Similar Datasheet

  • WFU4N60 - N-Channel MOSFET (Wisdom technologies)
  • WFU430 - N-Channel MOSFET (Wisdom technologies)
  • WFU1N80 - N-Channel MOSFET (Wisdom technologies)
  • WFU2N60 - N-Channel MOSFET (Wisdom technologies)
  • WFU5N60 - HIGH VOLTAGE N-Channel MOSFET (Wisdom technologies)
Other Datasheets by Winsemi

Full PDF Text Transcription

Click to expand full text
Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr U4N60 WF WFU Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast.
Published: |