Datasheet4U Logo Datasheet4U.com

WFW18N50W Datasheet Silicon N-Channel MOSFET

Manufacturer: Winsemi

Datasheet Details

Part number WFW18N50W
Manufacturer Winsemi
File Size 871.84 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFW18N50W Datasheet

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 500 18 12.7 80 ±30 330 27.7 4.5 280 -55~150 300 Units V A A A V mJ mJ V/ ns W ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.24 - Max 0.45 40 Units ℃/W ℃/W ℃/W Rev.A Aug.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFW18N50W Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Breakdown voltage Temperature coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus ga

Overview

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.

Key Features

  • 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 42nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.