WFW18N50W Key Features
- 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V
- Ultra-low Gate charge(Typical 42nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
- Part: WFW18N50W
- Manufacturer: Winsemi
- Size: 871.84 KB
Other WFW18N50W Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
WINSEMI SEMICONDUCTOR |
WFW18N50 | Silicon N-Channel MOSFET |
WFW18N50W Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for.