WFW18N50 Datasheet Silicon N-Channel MOSFET

Manufacturer: WINSEMI SEMICONDUCTOR

WFW18N50 silicon n-channel mosfet by WINSEMI SEMICONDUCTOR - Datasheet Preview

Datasheet Details

Part number	WFW18N50
Manufacturer	WINSEMI SEMICONDUCTOR
File Size	344.89 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFW18N50 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Overview

WFW18N50 Silicon N-Channel MOSFET.

Key Features

18A,500V,RDS(on)(Max0.265Ω)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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