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WFW18N50 - Silicon N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technology.

Features

  • 18A,500V,RDS(on)(Max0.265Ω)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFW18N50
Manufacturer WINSEMI SEMICONDUCTOR
File Size 344.89 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFW18N50 Datasheet

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WFW18N50 Silicon N-Channel MOSFET Features „ „ „ „ „ 18A,500V,RDS(on)(Max0.265Ω)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
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