WFW18N50N Overview
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for.
WFW18N50N Key Features
- 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V
- Ultra-low Gate charge(Typical 42nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
