Datasheet4U Logo Datasheet4U.com

WFW18N50N - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powe

Features

  • 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 42nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

Datasheet Details

Part number WFW18N50N
Manufacturer Winsemi
File Size 862.12 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFW18N50N Datasheet

📁 Similar Datasheet

  • WFW18N50 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
  • WFW10N80 - N-Channel MOSFET (Wisdom technologies)
  • WFW11N90 - N-Channel MOSFET (Wisdom technologies)
  • WFW20N50 - N-Channel MOSFET (Wisdom)
  • WFW20N60 - N-Channel MOSFET (Wisdom technologies)
  • WFW24N60 - N-Channel MOSFET (Wisdom technologies)
  • WFW28N60 - N-Channel MOSFET (Wisdom technologies)
  • WFW9N70 - N-Channel MOSFET (Wisdom technologies)
  • WFW9N90 - N-Channel MOSFET (Wisdom technologies)
Other Datasheets by Winsemi

Full PDF Text Transcription

Click to expand full text
Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFW18N50N Silicon N-Channel MOSFET Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
Published: |