WFW18N50N - Silicon N-Channel MOSFET

Product Overview

Winsemi

Datasheet Details

Part number	WFW18N50N
Manufacturer	Winsemi
File Size	862.12 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFW18N50N Datasheet
Additional preview pages of the WFW18N50N datasheet.

Product details

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain

Features

18A,500V,RDS(on)(Max0.27Ω)@VGS=10V.
Ultra-low Gate charge(Typical 42nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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Published: Apr 25, 2012 |