Datasheet4U Logo Datasheet4U.com

WFW20N60W Datasheet Silicon N-Channel MOSFET

Manufacturer: Winsemi

Datasheet Details

Part number WFW20N60W
Manufacturer Winsemi
File Size 340.55 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFW20N60W Datasheet

General Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerConverters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Junction and Storage Temperature Channel Temperature (Note1) (Note3) (Note1) Parameter Value 600 20 15 80 ±30 30 5.0 300 -55~150 300 Units V A A A V mJ V/ ns W ℃ ℃ Thermal Characteristics Symbol RQJC Parameter Thermal Resistance , Junction -to -Case Value Min - Typ - Max 0.25 Units ℃/W Rev.A Mar.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr W20 N60W WF WFW 20N Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Breakdown voltage Temperature coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=10A 30 60 40 85 Symbol IGSS V(BR)GSS IDSS V(BR)DSS △BVDSS/ △TJ

Overview

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.

Key Features

  • 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V Ultra-low Gate charge(Typical 150nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.