WFW20N60 Key Features
- RDS(on) (Typical 0.26 Ω )@VGS=10V
- Gate Charge (Typical 80nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
- Part: WFW20N60
- Manufacturer: Wisdom technologies
- Size: 683.49 KB
Other WFW20N60 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Winsemi |
WFW20N60W | Silicon N-Channel MOSFET |
WFW20N60 Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.