WFW9N90W Key Features
- 9A,900V, RDS(on)(Max1.35Ω)@VGS=10V
- Ultra-low Gate charge(Typical 58nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
- Part: WFW9N90W
- Manufacturer: Winsemi
- Size: 599.54 KB
Other WFW9N90W Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Wisdom technologies |
WFW9N90 | N-Channel MOSFET |
WFW9N90W Description
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies.