WFW9N90W mosfet equivalent, silicon n-channel mosfet.
* 9A,900V, RDS(on)(Max1.35Ω)@VGS=10V
* Ultra-low Gate charge(Typical 58nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Tempe.
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching.
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