Datasheet Summary
PROVISIONAL
Wisdom Semiconductor
N-Channel MOSFET
Features
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RDS(on) (Max 1.3 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
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{
2. Drain
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- 1. Gate {
▲
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{
3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies.
TO-247
G...
