Datasheet4U Logo Datasheet4U.com

WFW9N90 - N-Channel MOSFET

Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

These devices are well suited for high efficiency switch mode power supplies.

Features

  • RDS(on) (Max 1.3 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain.
  • www. DataSheet4U. com.
  • 1. Gate { ▲.
  • { 3. Source General.

📥 Download Datasheet

Datasheet Details

Part number WFW9N90
Manufacturer Wisdom technologies
File Size 139.55 KB
Description N-Channel MOSFET
Datasheet download datasheet WFW9N90 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WFW9N90W Silicon N-Channel MOSFET Winsemi
WFW13N50 Silicon N-Channel MOSFET Winsemi
WFW18N50 Silicon N-Channel MOSFET WINSEMI SEMICONDUCTOR
WFW18N50N Silicon N-Channel MOSFET Winsemi
WFW18N50W Silicon N-Channel MOSFET Winsemi

Other Datasheets by Wisdom technologies

Part Number Description
WFW9N70 N-Channel MOSFET
WFW10N80 N-Channel MOSFET
WFW11N90 N-Channel MOSFET
WFW20N60 N-Channel MOSFET
WFW24N60 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
PROVISIONAL Wisdom Semiconductor WFW9N90 N-Channel MOSFET Features ■ ■ RDS(on) (Max 1.3 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● www.DataSheet4U.com ■ ■ ■ 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies.
Published: |