WFW9N90W Datasheet | Winsemi

Datasheet pdf - http://..net/ .DataSheet.co.kr Silicon N-Channel MOSFET Features - 9A,900V, RDS(on)(Max1.35Ω)@VGS=10V - Ultra-low Gate charge(Typical 58nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode...