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WFW9N90W - Silicon N-Channel MOSFET

Description

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.

Features

  • 9A,900V, RDS(on)(Max1.35Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 58nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFW9N90W
Manufacturer Winsemi
File Size 599.54 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFW9N90W Datasheet

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Full PDF Text Transcription

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFW9N90W Silicon N-Channel MOSFET Features ■ 9A,900V, RDS(on)(Max1.35Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 58nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
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