Datasheet Details
| Part number | WGP15G65 |
|---|---|
| Manufacturer | Winsemi |
| File Size | 519.12 KB |
| Description | Silicon N-Channel MOSFET |
| Download | WGP15G65 Download (PDF) |
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| Part number | WGP15G65 |
|---|---|
| Manufacturer | Winsemi |
| File Size | 519.12 KB |
| Description | Silicon N-Channel MOSFET |
| Download | WGP15G65 Download (PDF) |
|
|
|
Absolute Maximum Ratings symbol Parameter VGE Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C IC Collector Current (continuous) at TC = 100°C ICM(1) Collector Current (pulsed) Eas Single Pulse Energy TC= 25°C PTOT Total Dissipation at TC = 25°C ESD ESD (Human Body Model) Tstg Storage Temperature Tj Max.
Operating Junction Temperature (1)Pulse width limited by safe operating area Thermal Characteristics Symbol RQJ C RQJ A Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value 40 30 15 45 500 150 3 - 55 to 150 Unit V A A A mJ W KV ℃ Value Min Typ --- Max 0.75 62.5 Unit ℃/W ℃/W Electrical Characteristics (TCASE= 25 °C UNLESS OTHERWISE SPECIFIED) Symbol Parameter Test Conditions BV(CES) BV(ECR) ICES IGES VGE(th) VCE(SAT) Clamped Voltage Emitter Collector Break-down Voltage Collector cut-off Current (VGE =0) Gate-Emitter Leakage Current (VCE =0) Gate Threshold Volta
WGP15G65 Product.
| Part Number | Description |
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