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WSP9926A - Dual N-Channel MOSFET

General Description

The WSP9926A is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Key Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available WSP9926A Dual N-Channel MOSFET Product Summery BVDSS 20V RDSON 20mΩ ID 7.5A.

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Datasheet Details

Part number WSP9926A
Manufacturer Winsok
File Size 1.06 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WSP9926A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description The WSP9926A is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WSP9926A meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available WSP9926A Dual N-Channel MOSFET Product Summery BVDSS 20V RDSON 20mΩ ID 7.