WFF8N60 - HIGH VOLTAGE N-Channel MOSFET

Wisdom technologies

Key Features

Low Intrinsic Capacitances .
Excellent Switching Characteristics .
Extended Safe Operating Area .
Unrivalled Gate Charge :Qg= 40nC (Typ. ).
BVDSS=600V,ID=7.5A.
RDS(on) :1.32 Ω (Max) @VG=10V.
100% Avalanche Tested GD S G! D !.
◀▲.
! S TO‐220F G‐Gate,D‐Drain,S‐Sourse Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain C.

WFF8N60 high voltage n-channel mosfet by Wisdom technologies - Datasheet Preview

Datasheet Details

Part number	WFF8N60
Manufacturer	Wisdom technologies
File Size	1.60 MB
Description	HIGH VOLTAGE N-Channel MOSFET
Datasheet	WFF8N60 Datasheet

Full PDF Text Transcription for WFF8N60 (Reference)

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HIGH VOLTAGE N-Channel MOSFET WFF8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ ...

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Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 40nC (Typ.) □ BVDSS=600V,ID=7.5A □ RDS(on) :1.

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