| Part Number | WFF8N60 Datasheet |
|---|---|
| Manufacturer | Wisdom technologies |
| Overview |
HIGH VOLTAGE N-Channel MOSFET
WFF8 N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charg.
* Low Intrinsic Capacitances * Excellent Switching Characteristics * Extended Safe Operating Area * Unrivalled Gate Charge :Qg= 40nC (Typ.) * BVDSS=600V,ID=7.5A * RDS(on) :1.32 Ω (Max) @VG=10V * 100% Avalanche Tested GD S G! D ! * ◀▲ * * ! S TO‐220F G‐Gate,D‐Drain,S‐Sourse Absolut. |
WFF8N60 Datasheet and Specifications PDF
The WFF8N60 is a HIGH VOLTAGE N-Channel MOSFET.
| Part Number | WFF8N60 Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | WINSEMI SEMICONDUCTOR |
| Overview |
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche .
* * * * * * 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (VISO=4000V AC) Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS. |