WFF8N60 - Silicon N-Channel MOSFET

Product Overview

WINSEMI SEMICONDUCTOR

Datasheet Details

Part number	WFF8N60
Manufacturer	WINSEMI SEMICONDUCTOR
File Size	565.34 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFF8N60 Datasheet
Additional preview pages of the WFF8N60 datasheet.

Product details

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.

Features

7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (VISO=4000V AC) Maximum Junction Temperature Range(150℃) General.

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Published: Nov 25, 2010 |