Datasheet Details
| Part number | WFF8N60 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 565.34 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet | WFF8N60_WINSEMISEMICONDUCTOR.pdf |
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Overview: .DataSheet.in WFF8N60 Silicon N-Channel MOSFET.
| Part number | WFF8N60 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 565.34 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet | WFF8N60_WINSEMISEMICONDUCTOR.pdf |
|
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This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 600 7.5* 4.3* 30 ±30 240 15 4.5 48 0.38 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ *Drain current limited by junction temperature Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 2.6 62.5 Units ℃/W ℃/W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
.DataSheet.in WFF8N60 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=600V,VGS=0V Min ±30 600 2 - Type 0.8 8.7 1100 135 16 30 80 65 60 28 7 14.5 Max ±100 10 100 4 1.2 1430 175 21 70 170 Unit nA V µA µA V V Ω S Drain cut -off current IDSS VDS=480V,Tc=125℃ Drain -source breakdown voltage Gate thres
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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WFF8N60 | HIGH VOLTAGE N-Channel MOSFET | Wisdom technologies |
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WFF8N60B | Silicon N-Channel MOSFET | Winsemi |
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WFF8N60C | Silicon N-Channel MOSFET | Winsemi |
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