WFF8N60 Overview
Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 600 7.5* 4.3* 30 ±30 240 15 4.5 48 0.38 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ *Drain current limited by junction temperature Symbol RQJC RQJA Parameter Value Min - Typ - Max 2.6 62.5 Units ℃/W ℃/W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
