WFF8N65L Overview
WFF8N65L Product Silicon N-Channel MOSFET Features � 7.5A,650V,RDS(on)(Max1.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 24nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃) General This Power MOSFET is N channel enhanced high voltage power MOS field effect transistor fabrication by F-CellTM planar high pressure VDMOS process technology. this product have lower...
WFF8N65L Key Features
- 7.5A,650V,RDS(on)(Max1.4Ω)@VGS=10V
- Ultra-low Gate charge(Typical 24nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Enhanced EMI capability
- Maximum Junction Temperature Range(150℃)