Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topo
Features
- 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V.
- Ultra-low Gate charge(Typical 25nC).
- Fast Switching Capability.
- 100%Avalanche Tested.
- Isolation Voltage (VISO=4000V AC).
- Maximum Junction Temperature Range(150℃)
WFF8N65B
Silicon N-Channel MOSFET
General.
WFF8N65B Datasheet
