WFF8N65B
Features
- 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V
- Ultra-low Gate charge(Typical 25n C)
- Fast Switching Capability
- 100%Avalanche Tested
- Isolation Voltage (VISO=4000V AC)
- Maximum Junction Temperature Range(150℃)
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy dv/dt
Peak Diode...
