Winsemi WFF8N60C
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.| Part No. | WFF8N60C |
|---|---|
| Datasheet | WFF8N60C Download |
| Manufacturer |  Winsemi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Silicon N-Channel MOSFETFEATURES
7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 54nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)GENERAL DESCRIPTION
D G SABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total P
