Wisdom technologies WFF8N60
HIGH VOLTAGE N-Channel MOSFET
| Part No. | WFF8N60 |
|---|---|
| Datasheet | WFF8N60 Download |
| Manufacturer |  Wisdom technologies |
| Description | HIGH VOLTAGE N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 40nC (Typ.) □ BVDSS=600V,ID=7.5A □ RDS(on) :1.32 Ω (Max) @VG=10V □ 100% Avalanche Tested GD S G! D !● ◀▲
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● ! S TO‐220F G‐Gate,D‐Drain,S‐Sourse
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (Tc=25℃) -continuous (Tc=100℃) Gate-Sourse Voltage Single Plused Avanche Energy (Note1) Avalanche Current (Note2) Power Dissipation (Tc=25℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds WFF8 N60 600 7.5* 4.7* ±30 420 7.5 48 -55 ~ +150 300 Units V A A V mJ A W ℃ ℃ Thermal Characteristics Symbol Parameter RθJC Thermal Resist
