Datasheet Details
| Part number | WFF8N60 |
|---|---|
| Manufacturer | Wisdom technologies |
| File Size | 1.60 MB |
| Description | HIGH VOLTAGE N-Channel MOSFET |
| Datasheet |
 WFF8N60 Datasheet
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Key Features
- Low Intrinsic Capacitances .
- Excellent Switching Characteristics .
- Extended Safe Operating Area .
- Unrivalled Gate Charge :Qg= 40nC (Typ. ).
- BVDSS=600V,ID=7.5A.
- RDS(on) :1.32 Ω (Max) @VG=10V.
- 100% Avalanche Tested GD S G! D !.
- ◀▲.
- ! S TO‐220F G‐Gate,D‐Drain,S‐Sourse Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain C.