WFF8N60B Datasheet | Winsemi

WFF8N60B Product Description Silicon N-Channel MOSFET Features - 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V - Ultra-low Gate charge(Typical 25nC) - Fast Switching Capability - 100%Avalanche Tested - Isolation Voltage (VISO=4000V AC) - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor...