WFU4N60 Key Features
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- Unrivalled Gate Charge : 15 nC (Typ.)
- BVDSS=600V,ID=4A
- Lower RDS(on) : 2.5Ω (Max) @VG=10V
- 100% Avalanche Tested
- Part: WFU4N60
- Manufacturer: Wisdom technologies
- Size: 643.70 KB
Other WFU4N60 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Winsemi |
WFU4N60 | Silicon N-Channel MOSFET |
WFU4N60 Description
HIGH VOLTAGE N-Channel MOSFET WFU4N60/WFD4N60 600V N-Channel MOSFET.