• Part: C2M1000170J
  • Description: Silicon Carbide Power MOSFET
  • Category: MOSFET
  • Manufacturer: Wolfspeed
  • Size: 768.96 KB
Download C2M1000170J Datasheet PDF
Wolfspeed
C2M1000170J
C2M1000170J is Silicon Carbide Power MOSFET manufactured by Wolfspeed.
Features TAB Drain Drain (TAB) - High Blocking Voltage with Low RDS(on) - Easy to Parallel and Simple to Drive - Low parasitic inductance - Low impedance package - Separate driver source pin - Ultra-low Drain-gate capacitance - Halogen Free, Ro HS pliant - Fast intrinsic diode with low reverse recovery (Qrr) - Wide creepage (~7mm) between drain and source 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo. Part Number C2M1000170J Package TO-263-7 Applications - Auxiliary Power Supplies - Switch Mode Power Supplies - High-voltage capacitive loads Benefits - Higher system efficiency - Smooth switching waveforms - Reduced Cooling Requirements - Minimum gate ringing - Increased System Reliability Maximum Ratings (TC = 25ºC unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Solder Temperature Symbol Value VDS max VGS max VGSop ID(pulse) PD TJ, Tstg TL 1700 -10/+25 -5/+20 5.6 3.9 15 60 -55 to +150...