Datasheet4U.com

C2M1000170J Datasheet Silicon Carbide Power MOSFET

Manufacturer: Wolfspeed

Overview: C2M1000170D 1 C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement.

C2M1000170J datasheet preview

Datasheet Details

Part number	C2M1000170J
Manufacturer	Wolfspeed
File Size	768.96 KB
Description	Silicon Carbide Power MOSFET
Datasheet	C2M1000170J-Wolfspeed.pdf

Key Features

TAB Drain Drain (TAB).
High Blocking Voltage with Low RDS(on).
Easy to Parallel and Simple to Drive.
Low parasitic inductance.
Low impedance package.
Separate driver source pin.
Ultra-low Drain-gate capacitance.
Halogen Free, RoHS Compliant.
Fast intrinsic diode with low reverse recovery (Qrr).
Wide creepage (~7mm) between drain and source 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power So.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	C2M1000170J	Silicon Carbide Power MOSFET	Cree
	C2M1000170D	Silicon Carbide Power MOSFET	Cree

More Datasheets from Wolfspeed

Part Number	Description
C2M1000170D	Silicon Carbide Power MOSFET
C2M0025120D	Silicon Carbide Power MOSFET
C2M0040120D	Silicon Carbide Power MOSFET
C2M0045170D	Silicon Carbide Power MOSFET
C2M0045170P	Silicon Carbide Power MOSFET
C2M0080120D	Silicon Carbide Power MOSFET
C2M0160120D	Silicon Carbide Power MOSFET
C2M0280120D	Silicon Carbide Power MOSFET

C2M1000170J Distributor