C3M0045065J1 mosfet equivalent, silicon carbide power mosfet.
Package
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* High blocking voltage with low on-resistance
* H.
Gate (Pin 1)
Driver Source (Pin 2)
Drain (TAB)
Power Source (Pin 3,4,5,6,7)
* Datacenter and Telecom Power Suppli.
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