C3M0065100J
C3M0065100J is Silicon Carbide Power MOSFET manufactured by Wolfspeed.
Features
TAB Drain
Drain
(TAB)
- C3MTM Si C MOSFET technology
- Low parasitic inductance with separate driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- Fast intrinsic diode with low reverse recovery (Qrr)
- Low output capacitance (60p F)
- Halogen free, Ro HS pliant
1234567 G KS S S S S S
Part Number
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
Package
Marking
TO 263-7
Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo.
Applications
- Renewable energy
- EV battery chargers
- High voltage DC/DC converters
- Switch Mode Power Supplies
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Increase power density
- Increase system switching frequency
Key Parameters
Parameter Drain
- Source Voltage Maximum Gate
- Source Voltage Operational Gate-Source Voltage
DC Continuous Drain Current
Symbol VDS
VGS(max) VGS op
Min. -8
Pulsed Drain Current Avalanche energy, Single pulse Power Dissipation Operating Junction and Storage Temperature Solder...
