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C3M0065100J Datasheet Silicon Carbide Power MOSFET

Manufacturer: Cree (now Wolfspeed)

Overview: VDS 1000 V C3M0065100J ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement.

Key Features

  • Package.
  • C3MTM SiC MOSFET technology TAB.
  • Low parasitic inductance with separate driver source pin Drain.
  • 7mm of creepage distance between drain and source.
  • High blocking voltage with low On-resistance.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Low output capacitance (60pF).
  • Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Wolfspeed Logo C3M0065100J Silicon Carbide Power MOSFET Wolfspeed
Wolfspeed Logo C3M0065100K Silicon Carbide Power MOSFET Wolfspeed

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