Part C3M0065100J
Description Silicon Carbide Power MOSFET
Category MOSFET
Manufacturer Cree
Size 0.98 MB
Cree

C3M0065100J Overview

Key Features

  • C3MTM SiC MOSFET technology TAB
  • Low parasitic inductance with separate driver source pin Drain
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Low output capacitance (60pF)
  • Halogen free, RoHS compliant Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Increase power density