C3M0065100J Overview
Key Features
- C3MTM SiC MOSFET technology TAB
- Low parasitic inductance with separate driver source pin Drain
- 7mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- Fast intrinsic diode with low reverse recovery (Qrr)
- Low output capacitance (60pF)
- Halogen free, RoHS compliant Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Increase power density
