C3M0065100J
C3M0065100J is Silicon Carbide Power MOSFET manufactured by Cree.
1000 V
ID @ 25˚C
32 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
Features
Package
- C3MTM SiC MOSFET technology
- Low parasitic inductance with separate driver source pin
Drain
- 7mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- Fast intrinsic diode with low reverse recovery (Qrr)
- Low output capacitance (60pF)
- Halogen free, RoHS pliant
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Increase power density
- Increase system switching frequency Applications
- Renewable energy
- EV battery...
