C3M0065100J Description
VDS 1000 V C3M0065100J ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode.
C3M0065100J Key Features
- C3MTM SiC MOSFET technology
- Low parasitic inductance with separate driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- Fast intrinsic diode with low reverse recovery (Qrr)
- Low output capacitance (60pF)
- Halogen free, RoHS pliant
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Increase power density