The C3M0065100J is a Silicon Carbide Power MOSFET.
| Package | TO-263-7 |
|---|---|
| Height | 4.82 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | C3M0065100J Datasheet |
|---|---|
| Manufacturer | Wolfspeed |
| Overview |
C3M0065100J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology
N-Channel Enhancement Mode
Features
TAB Drain
Drain
(TAB)
• C3MTM SiC MOSFET technology • Low parasitic inductance with separate.
TAB Drain
Drain
(TAB)
* C3MTM SiC MOSFET technology * Low parasitic inductance with separate driver source pin * 7mm of creepage distance between drain and source * High blocking voltage with low On-resistance * Fast intrinsic diode with low reverse recovery (Qrr) * Low output capacitance (60pF). |
| Part Number | C3M0065100J Datasheet |
|---|---|
| Description | Silicon Carbide Power MOSFET |
| Manufacturer | Cree |
| Overview |
VDS
1000 V
C3M0065100J
ID @ 25˚C
32 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
Features
Package
• C3MTM SiC MOSFET technology
.
Package
* C3MTM SiC MOSFET technology TAB * Low parasitic inductance with separate driver source pin Drain * 7mm of creepage distance between drain and source * High blocking voltage with low On-resistance * Fast intrinsic diode with low reverse recovery (Qrr) * Low output capacitance (60pF. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| DigiKey | 524 | 1+ : 23.32 USD 10+ : 16.849 USD 100+ : 16.8147 USD |
View Offer |
| Richardson RFPD | -3 | - | View Offer |
| Fly-Wing Technology | 881 | 1+ : 18.8496 USD 10+ : 16.75168 USD 100+ : 14.651824 USD |
View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| C3M0065100K | Wolfspeed | Silicon Carbide Power MOSFET |
| C3M0065100K | Cree | Silicon Carbide Power MOSFET |