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C3M0065100J - Silicon Carbide Power MOSFET

Key Features

  • TAB Drain Drain (TAB).
  • C3MTM SiC MOSFET technology.
  • Low parasitic inductance with separate driver source pin.
  • 7mm of creepage distance between drain and source.
  • High blocking voltage with low On-resistance.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Low output capacitance (60pF).
  • Halogen free, RoHS compliant 1234567 G KS S S S S S Part Number Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package.

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📁 Similar Datasheet

Part Number Description Manufacturer
C3M0065100J Silicon Carbide Power MOSFET CREE
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Other Datasheets by Wolfspeed

Part Number Description
C3M0065100K Silicon Carbide Power MOSFET
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C3M0065100J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features TAB Drain Drain (TAB) • C3MTM SiC MOSFET technology • Low parasitic inductance with separate driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halogen free, RoHS compliant 1234567 G KS S S S S S Part Number Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Marking C3M0065100J TO 263-7 C3M0065100J Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.