C3M0065100J Overview
Key Specifications
Package: TO-263-7
Height: 4.82 mm
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Key Features
- C3MTM SiC MOSFET technology
- Low parasitic inductance with separate driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- Fast intrinsic diode with low reverse recovery (Qrr)
- Low output capacitance (60pF)
- Halogen free, RoHS compliant 1234567 G KS S S S S S Part Number Gate (Pin
- Driver Source (Pin
