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C3M0120100J Datasheet Silicon Carbide Power MOSFET

Manufacturer: Wolfspeed

Overview: C3M0120100J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain.

Key Features

  • C3MTM SiC MOSFET technology.
  • Low parasitic inductance with separate driver source pin.
  • 7mm of creepage distance between drain and source.
  • High blocking voltage with low On-resistance.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Low output capacitance (60pF).
  • Halogen free, RoHS compliant 1234567 G KS S S S S S Part Number Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Marking C3M0120100J TO.

Similar Datasheet

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