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C3M0120100K - Silicon Carbide Power MOSFET

Key Features

  • C3MTM SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Drain (TAB) Part Number C3M0120100K Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package TO 247-4 Marking C.

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C3M0120100K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Drain (TAB) Part Number C3M0120100K Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package TO 247-4 Marking C3M0120100K Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.