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C3M0280090J - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • New C3M Silicon Carbide (SiC) MOSFET technology.
  • High blocking voltage with low On-resistance.
  • High speed switching with low capacitances.
  • New low impedance package with driver source.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant.
  • Wide creepage (~7mm) between drain and source 1 2 34 5 6 7 G KS S S S S S Part Number C3M0280090J Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) P.

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Datasheet Details

Part number C3M0280090J
Manufacturer Wolfspeed
File Size 869.79 KB
Description Silicon Carbide Power MOSFET
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C3M0280090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain (TAB) Features • New C3M Silicon Carbide (SiC) MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source 1 2 34 5 6 7 G KS S S S S S Part Number C3M0280090J Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package TO-263-7 Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.
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