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C3M0280090J Silicon Carbide Power MOSFET

C3M0280090J Description

C3M0280090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain (TAB) .

C3M0280090J Features

* New C3M Silicon Carbide (SiC) MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* New low impedance package with driver source
* Fast intrinsic diode with low reverse recovery (Qrr)
* Haloge

C3M0280090J Applications

* Renewable energy
* Lighting
* High voltage DC/DC converters
* Telecom Power Supplies
* Induction Heating Benefits
* Higher system efficiency
* Reduced cooling requirements
* Increased power density
* Increased system switch

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Datasheet Details

Part number
C3M0280090J
Manufacturer
Wolfspeed
File Size
869.79 KB
Datasheet
C3M0280090J-Wolfspeed.pdf
Description
Silicon Carbide Power MOSFET

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