Datasheet Summary
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features
- New C3M SiC MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- New low impedance package with driver source
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Wide creepage (~7mm) between drain and source
Package
TAB Drain
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency Applications
- Renewable energy
- Lighting
- High voltage DC/DC converters
- Tele Power Supplies
- Induction Heating
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