C3M0280090J Overview
C3M0280090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain (TAB).
C3M0280090J Key Features
- New C3M Silicon Carbide (SiC) MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- New low impedance package with driver source
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Wide creepage (~7mm) between drain and source
