Datasheet Summary
Silicon Carbide Power MOSFET C3MTM MOSFET Technology
N-Channel Enhancement Mode
TAB Drain
Drain (TAB)
Features
- New C3M Silicon Carbide (SiC) MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- New low impedance package with driver source
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Wide creepage (~7mm) between drain and source
1 2 34 5 6 7 G KS S S S S S
Part Number C3M0280090J
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
Package TO-263-7
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