C3M0280090J Datasheet
C3M0280090J Datasheet (Cree)
Cree
C3M0280090J Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High sp.
* New C3M SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* New low impedance package with driver source
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant
* Wide creepage (~7mm) between drain and so.
C3M0280090J Datasheet (Wolfspeed)
Wolfspeed
C3M0280090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain (TAB) Features • New C3M Silicon Carbide (SiC) MOSFET technology • High blocking voltag.
* New C3M Silicon Carbide (SiC) MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* New low impedance package with driver source
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant
* Wide creepage (~7mm) be.