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CAB011M12FM3T - All-Silicon Carbide Half-Bridge Module

Download the CAB011M12FM3T datasheet PDF. This datasheet also covers the CAB011M12FM3 variant, as both devices belong to the same all-silicon carbide half-bridge module family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ultra-Low Loss.
  • High Frequency Operation.
  • Zero Turn-Off Tail Current from MOSFET.
  • Normally-Off, Fail-Safe Device Operation.
  • Optional Pre-Applied Thermal Interface Material VDS RDS(on) 1200 V 11 mΩ Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CAB011M12FM3-Wolfspeed.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CAB011M12FM3, CAB011M12FM3T 1200 V, 11 mΩ, Silicon Carbide, Half-Bridge Module Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material VDS RDS(on) 1200 V 11 mΩ Typical Applications • DC-DC Converters • EV Chargers • High-Efficiency Converters / Inverters • Renewable Energy • Smart-Grid / Grid-Tied Distributed Generation System Benefits • Enables Compact, Lightweight Systems • Increased System Efficiency, due to Low Switching & Conduction Losses of SiC • Reduced Thermal Requirements and System Cost Key Parameters Parameter Symbol Min. Typ. Max.
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