| Title | MOSFET MODULE, DUAL N CH, 1.2KV, 450A |
| Description | CAB450M12XM3 VDS 1200 V 5 4 IDS 3 450 A 2 1 1200 V, 2.6 mΩ, Silicon Carbide, Half-Bridge Module D Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low-Inductance (6.7 nH) Design • Implements Conduction-Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate • 1200 V Drain-Source Voltage C ... |
| Features |
• High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low-Inductance (6.7 nH) Design • Implements Conduction-Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate • 1200 V Drain-Source Voltage C V+ V+ G1 K1 G2 K2 V- Mid NTC1 -t° NTC2 Applications • Motor & Motion Control... |
| Datasheet |
 CAB450M12XM3 Datasheet - 2.35MB |
| Distributor |
element14 Asia-Pacific |
| Stock | 3 In stock |
| Price |
1 units: 1585150 KRW
|
| BuyNow |
 BuyNow - Manufacturer a Wolfspeed CAB450M12XM3
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
element14 Asia-Pacific |
1 units: 1585150 KRW |
BuyNow |
|
 DigiKey |
10 units: 1193311.8 KRW 1 units: 1236436 KRW |
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|
 Mouser Electronics |
1 units: 857.07 USD |
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|
 RS |
5 units: 8664.8 HKD 1 units: 8841.7 HKD |
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|
 Chip1Stop |
1 units: 839 USD 10 units: 739 USD |
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|
 Richardson RFPD |
1 units: 850.02 USD |
BuyNow |
