CAB760M12HM3 Overview
CAB760M12HM3 1200 V, 760 A, Silicon Carbide, Half-Bridge Module VDS 1200 V IDS 760 A 5 4 3 2.
CAB760M12HM3 Key Features
- Low Inductance, Low Profile 62 mm Footprint
- High Junction Temperature (175 °C) Operation
- Implements Switching Optimized Third Generation
- Light Weight AlSiC Baseplate
- High Reliability Silicon Nitride Insulator