CAB760M12HM3
Features
- Low Inductance, Low Profile 62 mm Footprint
- High Junction Temperature (175 °C) Operation
- Implements Switching Optimized Third Generation
Si C MOSFET Technology
- Light Weight Al Si C Baseplate
- High Reliability Silicon Nitride Insulator
V+
G1 K1
Mid
NTC1
G2 K2
-t°
NTC2
V-
Typical Applications
- Railway & Traction
- Solar
- EV Chargers
- Industrial Automation & Testing
System Benefits
- Lightweight, pact Form Factor with 62 mm patible Baseplate Enables System Retrofit
- Increased System Efficiency, B
Conduction Losses of Si C due to
L45 ow
Switching
&
- High Reliability Material Selection
6 7
-t°
9 3
Key Parameters
Parameter
Symbol Min. Typ. Max. Unit...
