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CAB760M12HM3 - Silicon Carbide Half-Bridge Module

Key Features

  • Low Inductance, Low Profile 62 mm Footprint.
  • High Junction Temperature (175 °C) Operation.
  • Implements Switching Optimized Third Generation SiC MOSFET Technology.
  • Light Weight AlSiC Baseplate.
  • High Reliability Silicon Nitride Insulator D V+ G1 K1 Mid NTC1 G2 K2 -t° C NTC2 V- Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAB760M12HM3 1200 V, 760 A, Silicon Carbide, Half-Bridge Module VDS 1200 V IDS 760 A 5 4 3 2 1 Technical Features • Low Inductance, Low Profile 62 mm Footprint • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Light Weight AlSiC Baseplate • High Reliability Silicon Nitride Insulator D V+ G1 K1 Mid NTC1 G2 K2 -t° C NTC2 V- Typical Applications • Railway & Traction • Solar • EV Chargers • Industrial Automation & Testing System Benefits 1 • Lightweight, Compact Form Factor with 62 mm Compatible Baseplate Enables System Retrofit • Increased System Efficiency, B Conduction Losses of SiC due to L45 ow Switching & 2 • High Reliability Material Selection 8 6 7 -t° 9 3 Key Parameters Param