Datasheet Summary
1200 V, 760 A, Silicon Carbide, Half-Bridge Module
1200 V
760 A
Technical Features
- Low Inductance, Low Profile 62 mm Footprint
- High Junction Temperature (175 °C) Operation
- Implements Switching Optimized Third Generation
SiC MOSFET Technology
- Light Weight AlSiC Baseplate
- High Reliability Silicon Nitride Insulator
V+
G1 K1
Mid
NTC1
G2 K2
-t°
NTC2
V-
Typical Applications
- Railway & Traction
- Solar
- EV Chargers
- Industrial Automation & Testing
System Benefits
- Lightweight, pact Form Factor with 62 mm patible Baseplate Enables System Retrofit
- Increased System Efficiency, B
Conduction Losses of SiC due...