CAB760M12HM3
Overview
- Low Inductance, Low Profile 62 mm Footprint
- High Junction Temperature (175 °C) Operation
- Implements Switching Optimized Third Generation SiC MOSFET Technology
- Light Weight AlSiC Baseplate
- High Reliability Silicon Nitride Insulator
- V+ G1 K1 Mid NTC1 G2 K2 -t° C NTC2 V-
