E4D20120D
E4D20120D is Silicon Carbide Power MOSFET manufactured by Wolfspeed.
Features
- 4th generation Si C merged PIN schottky technology
- Zero reverse recovery current
- High-frequency operation
- Temperature-independent switching behavior
- AEC-Q101 qualified and PPAP capable
- Humidity resistant
TO-247-3
Package Types: TO-247-3 PN’s: E4D20120D
Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo.
Applications
- Boost diodes in PFC or DC/DC stages
- Free wheeling diodes in inverter stages
- AC/DC converters
- Automotive and traction power conversion
- PV inverters
Benefits
- Replace bipolar with unipolar rectifiers
- Essentially no switching losses
- Higher efficiency
- Reduction of heat sink requirements
- Parallel devices without thermal runaway
- Ideal for outdoor environments
Maximum Ratings (TC = 25 °C Unless Otherwise Specified)
Parameter Repetitive Peak Reverse Voltage DC Peak Reverse Voltage
Symbol VRRM VR
Value 1200 1200
Unit V
33/66
Continuous Forward Current
16/32
10/20
Power Dissipation
Ptot
Repetitive Peak Forward Surge Current
45-...
