GTVA126001FC Description
The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.
GTVA126001FC Key Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle
- Output power (P3dB) = 600 W
- Drain efficiency = 65%
- Gain = 18 dB
- Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 µs puls
- Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS pliant
- 12 -2.3