* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D D A16T 3401 SOT-23(PACKAGE) GS GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1
GT3401
YGMOS
136.55 KB
30v p-channel mosfet.
YGMOS Technology Crop. 30V P-Channel Enhancement-Mode MOSFET 30V P MOS GT3401 Data Sheet VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A = 60mΩ RDS(ON), V.
📁 Related Datasheet
GT346A PNP Transistor (ETC)
GT34C02 2Kb SPD EEPROM (Giantec Semiconductor)
GT34C02A 2K Bits SPD EEPROM (Giantec Semiconductor)
GT34C02B 2K Bits SPD EEPROM (Giantec Semiconductor)
GT34C04 4K Bits SPD EEPROM (Giantec Semiconductor)
GT34TS02 Temperature Sensor (Giantec Semiconductor)
GT34TS02B Temperature Sensor (Giantec Semiconductor)
GT34TS04 Temperature Sensor (Giantec Semiconductor)
GT34TS04A Temperature Sensor (Giantec Semiconductor)
GT30 Programmable Display (NAiS)
