YJD80G06A Datasheet - Yangzhou Yangjie

N-Channel Enhancement Mode Field Effect Transistor

YJD80G06A General Description

* Split Gate Trench MOSFET technology * Excellent package for heat dissipation * High density cell design for low RDS(ON) Applications * DC-DC Converters * Power management functions * Industrial and Motor Drive applications * Absolute Maximum Ratings (TA=25℃unless othe.

YJD80G06A Datasheet (635.01 KB)

YJD80G06A Datasheet Preview — Preview of YJD80G06A PDF

Datasheet Details

Part number:

YJD80G06A

Manufacturer:

Yangzhou Yangjie

File Size:

635.01 KB

Description:

N-channel enhancement mode field effect transistor.
YJD80G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS ID RDS(ON)( at VGS=10V) RDS.

📁 Related Datasheet

YJD15N10A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJ162-1 YJ162-1 (ETC)

YJ60A Single-cell lithium battery power indicator (YENJI)

YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJG25GP10A P-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJG25GP10AQ P-Channel 100V MOSFET (VBsemi)

YJG53G06A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJG85G06A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJH03N10A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJL02N10A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

TAGS

YJD80G06A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

Image Gallery

YJD80G06A General Description

Datasheet Details

File Size:

Description:

YJD80G06A Distributor