YJD80G06A - N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

General Description

Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Industrial and Motor Drive applications Absolute Maximum Ratings (TA=25℃unless othe

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Datasheet Details

Part number	YJD80G06A
Manufacturer	Yangzhou Yangjie
File Size	635.01 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	YJD80G06A Datasheet

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YJD80G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.