logo

YJQ4666A Datasheet, Yangzhou Yangjie

YJQ4666A Datasheet, Yangzhou Yangjie

YJQ4666A

datasheet Download (Size : 554.98KB)

YJQ4666A Datasheet

YJQ4666A transistor equivalent, p-channel enhancement mode field effect transistor.

YJQ4666A

datasheet Download (Size : 554.98KB)

YJQ4666A Datasheet

Application


* Battery charge
* Load switching in Cellular handset
* Ultraportable applications
* Absolute Maximum R.

Description


* Trench Power LV MOSFET technology
* Low RDS(ON)
* Low Gate Charge Applications
* Battery charge
* Load switching in Cellular handset
* Ultraportable applications
* Absolute Maximum Ratings (TA=25℃unless otherwise noted.

Image gallery

YJQ4666A Page 1 YJQ4666A Page 2 YJQ4666A Page 3

TAGS

YJQ4666A
P-Channel
Enhancement
Mode
Field
Effect
Transistor
Yangzhou Yangjie

Manufacturer


Yangzhou Yangjie

Related datasheet

YJQ4666B

YJQ4666C

YJ162-1

YJ60A

YJB150N06BQ

YJD15N10A

YJD80G06A

YJG25GP10A

YJG53G06A

YJG85G06A

YJH03N10A

YJL02N10A

YJL03N06A

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts