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YJQ4666B - P-Channel Enhancement Mode Field Effect Transistor

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Trench Power LV MOSFET technology Low RDS(ON) Low Gate Charge Applications Battery charge Load switching in Cellular handset Ultraportable applications Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source

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Datasheet Details

Part number YJQ4666B
Manufacturer Yangzhou Yangjie
File Size 711.24 KB
Description P-Channel Enhancement Mode Field Effect Transistor
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YJQ4666B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.
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