Datasheet4U Logo Datasheet4U.com

YJQ4666A - P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

Trench Power LV MOSFET technology Low RDS(ON) Low Gate Charge Applications Battery charge Load switching in Cellular handset Ultraportable applications Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source

📥 Download Datasheet

Datasheet preview – YJQ4666A

Datasheet Details

Part number YJQ4666A
Manufacturer Yangzhou Yangjie
File Size 554.98 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet YJQ4666A Datasheet
Additional preview pages of the YJQ4666A datasheet.

📁 Similar Datasheet

Other Datasheets by Yangzhou Yangjie
  • YJQ4666B - P-Channel Enhancement Mode Field Effect Transistor
  • YJQ4666C - P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
YJQ4666A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.
Published: |