YJQ4666B - P-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

General Description

Trench Power LV MOSFET technology Low RDS(ON) Low Gate Charge Applications Battery charge Load switching in Cellular handset Ultraportable applications Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source

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Datasheet Details

Part number	YJQ4666B
Manufacturer	Yangzhou Yangjie
File Size	711.24 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	YJQ4666B Datasheet

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Other Datasheets by Yangzhou Yangjie

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YJQ4666A	P-Channel Enhancement Mode Field Effect Transistor
YJQ4666C	P-Channel Enhancement Mode Field Effect Transistor

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YJQ4666B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.