Datasheet Details
| Part number | YJQ4666B |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 711.24 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJQ4666B-YangzhouYangjie.pdf
|
| Part number | YJQ4666B |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 711.24 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJQ4666B-YangzhouYangjie.pdf
|
Trench Power LV MOSFET technology Low RDS(ON) Low Gate Charge Applications Battery charge Load switching in Cellular handset Ultraportable applications Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient B Thermal Resistance Junction-to-Case Juncti
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