YJQ4666B Datasheet - Yangzhou Yangjie

P-Channel Enhancement Mode Field Effect Transistor

YJQ4666B General Description

* Trench Power LV MOSFET technology * Low RDS(ON) * Low Gate Charge Applications * Battery charge * Load switching in Cellular handset * Ultraportable applications * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source .

YJQ4666B Datasheet (711.24 KB)

YJQ4666B Datasheet Preview — Preview of YJQ4666B PDF

Datasheet Details

Part number:

YJQ4666B

Manufacturer:

Yangzhou Yangjie

File Size:

711.24 KB

Description:

P-channel enhancement mode field effect transistor.
YJQ4666B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary VDS ID RDS(ON)( at VGS=-4.5V) RD.

📁 Related Datasheet

YJQ4666A P-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJQ4666C P-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJ162-1 YJ162-1 (ETC)

YJ60A Single-cell lithium battery power indicator (YENJI)

YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJD15N10A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJD80G06A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJG25GP10A P-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJG25GP10AQ P-Channel 100V MOSFET (VBsemi)

YJG53G06A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

TAGS

YJQ4666B P-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

Image Gallery

YJQ4666B General Description

Datasheet Details

File Size:

Description:

YJQ4666B Distributor