ZM027N03D mosfet equivalent, 30v n-channel power mosfet.
* Advance high cell density Trench technology
*Low RDS(ON) to minimize conductive loss
*Low Gate Charge for fast switching
*Low Thermal resistance
*Ap.
* Features
* Advance high cell density Trench technology
*Low RDS(ON) to minimize conductive loss
*Low .
The ZM027N03D combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
* Features
* Advance high cell density Trench t.
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