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ZM027N03D - 30V N-Channel Power MOSFET

Datasheet Summary

Description

MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet Details

Part number ZM027N03D
Manufacturer ZMJ
File Size 519.80 KB
Description 30V N-Channel Power MOSFET
Datasheet download datasheet ZM027N03D Datasheet
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    ZMJ SEMICONDUCTOR CO., LTD ● General Description The ZM027N03D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ●Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver ●Ordering Information: Part NO. Marking Packing Information Basic ordering unit (pcs) ZM027N03D 30V N-Channel Power MOSFET ● Product Summary VDS =30V RDS(ON) =2.
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